Properties of Silicon Nanowhiskers Grown by Molecular-Beam Epitaxy

Abstract

Silicon nanowhiskers (NW) in the diameter range of 70 to 200 nm and the length range of 580 to 890 nm were grown on silicon 〈111〉 wafers by molecular beam epitaxy. Small clusters of gold on the silicon surface were used as seeds to initiate the growth of NW. Current‐voltage and current‐temperature dependencies for the NW structures revealed Schottky barrier effect and the presence of the centers which are nonhomogeneously distributed along the length of NWs. Recharging of these centers provides the conductivity of NWs at temperatures below 280 K.