JOURNAL ARTICLE
Properties of Silicon Layers Grown by Molecular-Beam Epitaxy
В. Г. ШенгуровС. П. СветловV. Yu. ChalkovG. N. GorsheninD. V. ShengurovС.А. Денисов
Year: 2005 Journal: Inorganic Materials Vol: 41 (11)Pages: 1131-1134 Publisher: Pleiades Publishing
Keywords:
Molecular beam epitaxy Sublimation (psychology) Silicon Doping Materials science Photoluminescence Optoelectronics Epitaxy Monocrystalline silicon Analytical Chemistry (journal) Mineralogy Chemistry Nanotechnology Layer (electronics)
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3
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0.00
FWCI (Field Weighted Citation Impact)
5
Refs
0.13
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Citation History
Topics
Silicon Nanostructures and Photoluminescence
Physical Sciences → Materials Science → Materials Chemistry
Nanowire Synthesis and Applications
Physical Sciences → Engineering → Biomedical Engineering
Thin-Film Transistor Technologies
Physical Sciences → Engineering → Electrical and Electronic Engineering
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BOOK-CHAPTER
Molecular Beam Epitaxy of Silicon Layers
Swaminathan P. IyerAdrian R. Powell
Elsevier eBooks Year: 2001 Pages: 5798-5801