SnO₂: CuSb₂O₆ Thin Films Prepared by Pulsed Laser Deposition

Abstract

SnO2 thin films doped with CuSb2O6 were prepared by pulsed laser deposition method, in an attempt to evaluate the effect of Cu and Sb co-doping on optical and electrical properties. Alkaline-free borosilicate glass substrates were used as substrate where the substrate temperature was maintained in the range of 575∼650°C during deposition with oxygen pressure of 3∼5 mTorr and laser energy density of 1 Jcm−2. The minimum electrical resistivity value was obtained from SnO2:8%CuSb2O6 films, which was approximately 1.3 × 10−3 Ωcm, while its optical transmittance is relatively poor with ∼46% at 6000Å. The highest optical transmittance value was obtained from SnO2:2%CuSb2O6 films, which was about 80% at 6000Å, where its electrical resistivity value was 5.9 × 10−3 Ωcm.