Switching Properties of Bi_3.15Nd_0.85Ti₃O₁₂ Thin Films Prepared by Metalorganic Deposition Method

Abstract

Bi3.15Nd0.85Ti3O12 thin films were fabricated using a metalorganic decomposition method. The effect of gas environment and annealing temperature on the switching time was investigated. It was found that the switching time was not significantly affected by the annealing gas environment at 700°C, which indicates oxygen vacancies have no influence on the switching time. However, the annealing temperature has great effect on the switching time. It increases with the increase of annealing temperature below 750°C, and decreases above 750°C. Several proposals have been given to explain this phenomenon and a growth-dominated switching process is proposed in BNT thin films.