Electronic structure of (TaSe4)2I and (NbSe4)3I from high-resolution photoemission

F. Zwick; L. Perfetti; M. Grioni

doi:10.1051/jp4:19991098

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Electronic structure of (TaSe₄)₂I and (NbSe₄)₃I from high-resolution photoemission

F. Zwick L. Perfetti M. Grioni

Year: 1999 Journal: Journal de Physique IV (Proceedings) Vol: 09 (PR10)Pages: Pr10-367 Publisher: Springer Science+Business Media

DOI: 10.1051/jp4:19991098

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Abstract

Note: Ecole Polytech Fed Lausanne, CH-1015 Lausanne, Switzerland. Zwick, F, Ecole Polytech Fed Lausanne, CH-1015 Lausanne, Switzerland.ISI Document Delivery No.: 278YTTimes Cited: 0Cited Reference Count: 0 Reference LSE-ARTICLE-1999-033View record in Web of Science Record created on 2006-10-03, modified on 2017-05-12

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High resolution Physics Materials science Geology

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Inorganic Chemistry and Materials

Physical Sciences → Chemistry → Inorganic Chemistry

Iron-based superconductors research

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Molecular Junctions and Nanostructures

Physical Sciences → Engineering → Electrical and Electronic Engineering

Electronic structure of (TaSe₄)₂I and (NbSe₄)₃I from high-resolution photoemission

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Electronic structure of (TaSe4)2I and (NbSe4)3I from high-resolution photoemission

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