Fabrication and characterization of p-Si/n-ZnO heterojunction ultraviolet photodetector

Nripendra N. Halder; P. Biswas; Arunavo Choudhuri; P. Banerji

doi:10.1063/1.4915453

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Fabrication and characterization of p-Si/n-ZnO heterojunction ultraviolet photodetector

Nripendra N. Halder P. Biswas Arunavo Choudhuri P. Banerji

Year: 2015 Journal: AIP conference proceedings Vol: 1661 Pages: 110008-110008 Publisher: American Institute of Physics

DOI: 10.1063/1.4915453

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Abstract

Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation Nripendra N. Halder, Pranab Biswas, Arunavo Choudhuri, P. Banerji; Fabrication and characterization of p-Si/n-ZnO heterojunction ultraviolet photodetector. AIP Conf. Proc. 15 May 2015; 1661 (1): 110008. https://doi.org/10.1063/1.4915453 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioAIP Conference Proceedings Search Advanced Search |Citation Search

Keywords:

Photodetector Fabrication Ultraviolet Characterization (materials science) Optoelectronics Heterojunction Materials science Nanotechnology

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Topics

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Fabrication and characterization of p-Si/n-ZnO heterojunction ultraviolet photodetector

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