ZnO transparent thin-film transistors with HfO ₂ /Ta ₂ O ₅ stacking gate dielectrics

Abstract

The performance improvement of ZnO thin-film transistors (TFTs) using HfO2/Ta2O5 stacked gate dielectrics was demonstrated. The ZnO TFTs exhibited transistor behaviour over the range 0–10 V; the field effect mobility, subthreshold slope and on/off ratio were measured to be 1.3 cm2V−1s−1, 0.5 V/decade and ∼106, respectively.