Silicon Nitride in Bipolar Devices (Diodes, Transistors and Thyristors)

Eberhard F. Krimmel; Rudolf Hezel; Uwe Nohl; Rainer Bohrer

doi:10.1007/978-3-662-09901-8_16

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Silicon Nitride in Bipolar Devices (Diodes, Transistors and Thyristors)

Eberhard F. Krimmel Rudolf Hezel Uwe Nohl Rainer Bohrer

Year: 1991 Pages: 206-220

DOI: 10.1007/978-3-662-09901-8_16

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Keywords:

Bipolar junction transistor Materials science Thyristor Optoelectronics Diode Current injection technique Transistor Masking (illustration) Silicon nitride Power semiconductor device MISFET Nitride Electrical engineering Silicon Nanotechnology Field-effect transistor Engineering Voltage

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Silicon Carbide Semiconductor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Nitride in Bipolar Devices (Diodes, Transistors and Thyristors)

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