Growth of high quality Zn0.9Mg0.1O films on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy

H.H. Zhang; Xinhua Pan; Peng Ding; Jun Huang; Haiping He; W. Chen; Bin Lu; Jianguo Lü; S.S. Chen; Z.Z. Ye

doi:10.1016/j.apsusc.2013.04.071

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Growth of high quality Zn0.9Mg0.1O films on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy

H.H. Zhang Xinhua Pan Peng Ding Jun Huang Haiping He W. Chen Bin Lu Jianguo Lü S.S. Chen Z.Z. Ye

Year: 2013 Journal: Applied Surface Science Vol: 279 Pages: 212-215 Publisher: Elsevier BV

DOI: 10.1016/j.apsusc.2013.04.071

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Keywords:

Molecular beam epitaxy Sapphire Wurtzite crystal structure Materials science Epitaxy Transmission electron microscopy Electron diffraction Dislocation Luminescence Optoelectronics Layer (electronics) Diffraction Optics Nanotechnology Zinc Composite material Metallurgy Physics

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ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Copper-based nanomaterials and applications

Physical Sciences → Materials Science → Materials Chemistry

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Growth of high quality Zn0.9Mg0.1O films on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy

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