The Si-SiO2 Interface Roughness: Causes and Effects

Peter Hahn; M. Grundner; A. Schnegg; H.‐E. Jacob

doi:10.1007/978-1-4899-0774-5_44

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The Si-SiO2 Interface Roughness: Causes and Effects

Peter Hahn M. Grundner A. Schnegg H.‐E. Jacob

Year: 1988 Pages: 401-411

DOI: 10.1007/978-1-4899-0774-5_44

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Keywords:

Silicon X-ray photoelectron spectroscopy Materials science Scanning tunneling microscope Surface finish Surface roughness Thermal oxidation Oxide Low-energy electron diffraction Quantum tunnelling Chemical physics Analytical Chemistry (journal) Electron diffraction Nanotechnology Diffraction Optoelectronics Optics Chemistry Chemical engineering Composite material

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Integrated Circuits and Semiconductor Failure Analysis

Physical Sciences → Engineering → Electrical and Electronic Engineering

The Si-SiO2 Interface Roughness: Causes and Effects

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