13.7% Efficiency graphene–gallium arsenide Schottky junction solar cells with a P3HT hole transport layer

Hang He; Xuegong Yu; Yichao Wu; Xinhui Mu; Haiyan Zhu; Shuai Yuan; Deren Yang

doi:10.1016/j.nanoen.2015.06.023

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13.7% Efficiency graphene–gallium arsenide Schottky junction solar cells with a P3HT hole transport layer

Hang He Xuegong Yu Yichao Wu Xinhui Mu Haiyan Zhu Shuai Yuan Deren Yang

Year: 2015 Journal: Nano Energy Vol: 16 Pages: 91-98 Publisher: Elsevier BV

DOI: 10.1016/j.nanoen.2015.06.023

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Keywords:

Materials science Optoelectronics Gallium arsenide Solar cell Energy conversion efficiency Graphene Doping Schottky barrier Hybrid solar cell Short circuit Saturation current Polymer solar cell Nanotechnology Voltage Diode Electrical engineering

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Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

solar cell performance optimization

Physical Sciences → Engineering → Electrical and Electronic Engineering

13.7% Efficiency graphene–gallium arsenide Schottky junction solar cells with a P3HT hole transport layer

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