Quantum Materials for Next-Generation Energy-Efficient Electronics

Abstract

This paper presents a theoretical and computational study of quantum materials for next-generation energy-efficient electronics and spintronics. Focusing on topological insulators and two-dimensional quantum materials, the work investigates how topologically protected surface and edge states enable low-dissipation charge and spin transport. Tight-binding Hamiltonian modeling and density functional theory simulations are employed to analyze the electronic band structures, spin–momentum locking, and transport characteristics of Bi₂Se₃ and monolayer WTe₂. Numerical results demonstrate near-unity transmission probability, high Fermi velocities exceeding 4 × 10⁵ m/s, and significantly reduced power dissipation compared to conventional semiconductors. The findings highlight the potential of quantum materials to overcome fundamental power and scaling limitations of classical electronics and align strongly with ongoing research efforts in quantum materials and advanced electronics, particularly within Japan’s research ecosystem.