Abstract

Two types of ultrathin In2S3 nanosheets with thicknesses of 3–5 nm, terminated with (100) and (110) crystal facets, were successfully synthesized. The introduction of an excess sulfur precursor enables selective adsorption of released S2– ions onto the (100) surface, suppressing its growth and promoting the growth and exposure of the (110) crystal facets (denoted as IS-(100) and IS-(110), respectively). IS-(100) is of a narrower bandgap compared to IS-(110), enhancing its light absorption range. Water adsorption and dissociation were found to be more favorable on the IS-(100) surface, as indicated by the hydrogen reaction Gibbs free energy diagram. Furthermore, kinetic analysis demonstrates that IS-(100) has superior charge separation and transfer capabilities and reduced carrier recombination, relative to IS-(110), as evidenced by photoelectrochemical tests and photoluminescence measurements. In addition, IS-(100) has a more negative conduction band position than IS-(110). Consequently, IS-(100) exhibited a higher hydrogen evolution efficiency, achieving a value 1.67 times greater than that of IS-(110).

Keywords:
Photoluminescence Indium Band gap Crystal (programming language) Adsorption Dissociation (chemistry) Photocatalysis Hydrogen Gibbs free energy Charge carrier

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Topics

2D Materials and Applications
Physical Sciences →  Materials Science →  Materials Chemistry
Chalcogenide Semiconductor Thin Films
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Nanowire Synthesis and Applications
Physical Sciences →  Engineering →  Biomedical Engineering
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