High-Performance Photodetector Based on the ReSe₂/PtSe₂ van der Waals Heterojunction

Abstract

In\nrecent years, heterojunction photodetectors constructed of two-dimensional\nmaterials with no overhanging bonds and lattice mismatches have attracted\nwide attention due to the advantages of integrating different materials.\nHere, we report a high-performance photodetector with tunable dual\nauroral responses based on the semiconductor (ReSe₂) and\nsemimetal (PtSe₂) heterojunctions, with a high reverse\ncommutation ratio of 6.2 × 10⁴ at room temperature.\nUnder visible light irradiation, the photodetector, with an open circuit\nvoltage of 0.2 V and a short circuit current of 19 pA, and a high\non/off ratio of 5.5 × 10⁴, exhibits a clear photovoltaic\neffect. At the same time, the photodetector shows a photoelectric\nresponsivity and detectivity of 153 mA/W and 7.72 × 10¹¹ Jones, respectively. The photodetector also shows a large wideband\noptical detection capability between ultraviolet and near-infrared\nlight. Our work provides a model to develop future electronic and\noptoelectronic multifunctional devices based on a 2D semiconductor\nand a semimetal van der Waals heterojunction.