<i>In Situ</i> 2D MoS<sub>2</sub> Field-Effect\nTransistors with an Electron Beam Gate
Paul Masih Das (7305890)Marija Drndić (1330440)
Abstract
We\nuse the beam of a transmission electron microscope (TEM) to\nmodulate <i>in situ</i> the current–voltage characteristics\nof a two-terminal monolayer molybdenum disulfide (MoS<sub>2</sub>)\nchannel fabricated on a silicon nitride substrate. Suppression of\nthe two-dimensional (2D) MoS<sub>2</sub> channel conductance up to\n94% is observed when the beam hits and charges the substrate surface.\nGate-tunable transistor characteristics dependent on beam current\nare observed even when the beam is up to tens of microns away from\nthe channel. In contrast, conductance remains constant when the beam\npasses through a micron-sized hole in the substrate. There is no MoS<sub>2</sub> structural damage during gating, and the conductance reverts\nto its original value when the beam is turned off. We observe on/off\nratios up to ∼60 that are largely independent of beam size\nand channel length. This TEM field-effect transistor architecture\nwith electron beam gating provides a platform for future <i>in\nsitu</i> electrical measurements.
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