Transport Properties of Monolayer MoS₂ Grown\nby Chemical Vapor Deposition

Abstract

Recent\nsuccess in the growth of monolayer MoS₂ via chemical\nvapor deposition (CVD) has opened up prospects for the implementation\nof these materials into thin film electronic and optoelectronic devices.\nHere, we investigate the electronic transport properties of individual\ncrystallites of high quality CVD-grown monolayer MoS₂.\nThe devices show low temperature mobilities up to 500 cm² V^–1 s^–1 and a clear signature\nof metallic conduction at high doping densities. These characteristics\nare comparable to the electronic properties of the best mechanically\nexfoliated monolayers in literature, verifying the high electronic\nquality of the CVD-grown materials. We analyze the different scattering\nmechanisms and show that the short-range scattering plays a dominant\nrole in the highly conducting regime at low temperatures. Additionally,\nthe influence of optical phonons as a limiting factor is discussed.