JOURNAL ARTICLE

Experimental\nInvestigation on Vertically Oriented\nGraphene Grown in a Plasma-Enhanced Chemical Vapor Deposition Process

Abstract

Vertically oriented\ngraphene (VG) with three-dimensional architecture\nhas been proved to exhibit unique properties, and its particular morphology\nhas been realized by researchers to be crucial for its performance\nin practical applications. In this study, we investigated the morphology\nevolution of VG films synthesized by the plasma-enhanced chemical\nvapor deposition process, including porous graphene film, graphene\nwall, and graphene forest. This study reveals that the morphology\nof VG is controlled by a combination of the deposition and etching\neffects and tailored by the growth conditions, such as plasma source\npower and growth time and temperature. The plasma source power relates\nto the number of branches of VG, and the growth temperature relates\nto the thickness of each VG flake, whereas the growth time determines\nthe height of VG. Finally, the electrochemical properties of VG films\nalong with morphology evolution are investigated by fabricating as\nVG-based supercapacitor electrodes.

Keywords:
Chemical vapor deposition Deposition (geology) Graphene Plasma Porosity Process (computing) Supercapacitor Plasma-enhanced chemical vapor deposition

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