Thiol–ene Cross-Linked Polymer Gate Dielectrics\nfor Low-Voltage Organic Thin-Film Transistors

Abstract

We report a low-temperature processed,\nhydroxyl-free poly­(vinyl\nphenyl) (PVP) dielectric layer cross-linked using thiol–ene\nchemistry. This new dielectric material exhibited a high dielectric\nconstant as compared to conventional hydroxyl-free polymer dielectrics,\ne.g. polystyrene, and allowed for cross-linking at 80 °C, which\nis lower than the glass transition temperature of most commonly used\nplastic substrates, e.g. poly­(ethylene terathalate) (PET). Due to\nthe absence of hydroxyl groups, the dielectric layer displayed more\nstable performance than other previously reported cross-linked PVP\ndielectrics. The low-temperature processing, high air stability, and\nlow current–voltage hysteresis while retaining high device\nperformances are important advantages of this new dielectric material.