Surface Passivation Study on Gettered Multicrystalline Silicon

Abstract

In this study the electronic quality of multicrystalline silicon material in the as grown state and after various POCl3 diffusion steps is analyzed. For this purpose two different surface passivations (quinhydrone-methanol and a-Si:H) are tested and also their reproducibility is checked. It is found that the chemical passivation using quinhydrone-methanol is more complicated to apply for detecting small differences on a relatively high lifetime level which can be reached by the applied POCl3 diffusions on the Si materials under investigation.