JOURNAL ARTICLE

High-Pressure Behavior and Disorder for Ag<sub>2</sub>ZnSnS<sub>4</sub> and Ag<sub>2</sub>CdSnS<sub>4</sub>

Abstract

We carried out first-principles\ncalculations to simulate Ag<sub>2</sub>ZnSnS<sub>4</sub> and Ag<sub>2</sub>CdSnS<sub>4</sub> and\ncalculated enthalpies of different plausible structural models (kesterite-type,\nstannite-type, wurtzkesterite-type, wurtzstannite-type, and GeSb-type)\nto identify low- and high-pressure phases. For Ag<sub>2</sub>ZnSnS<sub>4</sub>, we predict the following transition: kesterite-type→[8.2GPa]→\nGeSb-type. At the transition pressure, the electronic structure changes\nfrom semiconducting to metallic. For Ag<sub>2</sub>CdSnS<sub>4</sub>, we cannot decide which of the experimentally observed structures\n(kesterite-type or wurtzkesterite-type) is the ground-state structure\nbecause their energy difference is too small. At 4.7 GPa, however,\nwe predict a transition to the GeSb-type structure with metallic character\nfor both structures. Regarding the sensitivity of the material to\ndisorder, a major drawback for solar cell applications, Ag<sub>2</sub>CdSnS<sub>4</sub> behaves similar to Cu<sub>2</sub>ZnSnS<sub>4</sub>, both showing a high tendency to cationic disorder. In contrast,\nthe disordered structures in Ag<sub>2</sub>ZnSnS<sub>4</sub> are much\nhigher in energy, and therefore, the material is less affected by\ndisorder.

Keywords:
Sensitivity (control systems) Electronic structure Energy (signal processing) Transition metal Cell structure

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Topics

Advanced Thermoelectric Materials and Devices
Physical Sciences →  Materials Science →  Materials Chemistry
Chalcogenide Semiconductor Thin Films
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Advanced Materials and Semiconductor Technologies
Physical Sciences →  Materials Science →  Materials Chemistry

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