Gonglan Ye (1394536)Yongji Gong (1394542)Junhao Lin (1394530)Bo Li (112195)Yongmin He (1394539)Sokrates T. Pantelides (1291473)Wu Zhou (336901)Robert Vajtai (1394533)Pulickel M. Ajayan (1285146)
MoS<sub>2</sub> is a promising and\nlow-cost material for electrochemical hydrogen production due to its\nhigh activity and stability during the reaction. However, the efficiency\nof hydrogen production is limited by the amount of active sites, for\nexample, edges, in MoS<sub>2</sub>. Here, we demonstrate that oxygen\nplasma exposure and hydrogen treatment on pristine monolayer MoS<sub>2</sub> could introduce more active sites via the formation of defects\nwithin the monolayer, leading to a high density of exposed edges and\na significant improvement of the hydrogen evolution activity. These\nas-fabricated defects are characterized at the scale from macroscopic\ncontinuum to discrete atoms. Our work represents a facile method to\nincrease the hydrogen production in electrochemical reaction of MoS<sub>2</sub> via defect engineering, and helps to understand the catalytic\nproperties of MoS<sub>2</sub>.
Licheng Wang (8293329)Weicheng Gao (6794444)Xing Chen (140292)Yaqi Liu (7105103)Ali Hamza Qureshi (6078368)Yongjun Liu (291644)Ming Chen (115604)Xiuyun Zhang (1289298)Yilv Guo (9178462)Jinlan Wang (1235505)
Yongzheng Zhang (1479694)Jing Du (264116)Ziqian Wang (2245957)Min Luo (258201)Yuan Tian (225002)Takeshi Fujita (667023)Qikun Xue (1919941)Mingwei Chen (1668166)
Anh Duc Nguyen (5955038)Thi Hue Pham (9596150)Tri Khoa Nguyen (5318300)Hamid Ullah (769316)Zeeshan Tahir (5955041)Yun Chang Park (1884355)Jongwoo Park (1429687)Joon Ik Jang (4333372)Young Han Shin (9596153)Yong Soo Kim (1396009)
Xiaofeng Zhao (413698)Xiaoyong Yang (4448335)Deobrat Singh (6406604)Pritam Kumar Panda (4806873)Wei Luo (80175)Yuxiang Li (142685)Rajeev Ahuja (1296249)
Gonglan YeYongji GongJunhao LinBo LiYongmin HeSokrates T. PantelidesWu ZhouRóbert VajtaiPulickel M. Ajayan