JOURNAL ARTICLE

Visible-Blind Self-Powered\nUltraviolet Photodetector\nBased on CuI/TiO<sub>2</sub> Nanostructured Heterojunctions

Abstract

An\nultraviolet (UV) photodetector (PD) is an indispensable element\nin the field of optoelectronics. However, the current PDs often need\nhigh driving voltages, which hinder the continued development of the\ndevices. P–n junctions have been used in the construction of\nself-powered UVPDs. In this work, we fabricated a self-powered UVPD\nbased on the CuI/TiO<sub>2</sub> nanostructured film. To investigate\nthe effects of the 80 nm thick CuI film on the device performance,\nwe compared the performance of UVPDs based on the CuI/TiO<sub>2</sub> film and TiO<sub>2</sub> film. Compared with the TiO<sub>2</sub> PD, the CuI/TiO<sub>2</sub> PD showed self-powered performance with\nan on–off ratio of 10<sup>3</sup> and a peak responsivity of\n28 mA W<sup>–1</sup> at 330 nm. It is worth noting that the\nCuI/TiO<sub>2</sub> device demonstrated a fast photo-response time\nof 35 ms and a decay time of 40 ms. The uniform CuI-nanostructured\nfilm spin-coated on the TiO<sub>2</sub> film constructs a built-in\nfield with the TiO<sub>2</sub> film to separate the photogenerated\ncarriers and transport them to both sides of the CuI/TiO<sub>2</sub> nanostructured heterojunction, which is the main reason for the\nself-powered performance of the CuI/TiO<sub>2</sub> UVPD. These results\nprovide a feasible means for the development of heterojunction self-powered\nUVPDs.

Keywords:
Heterojunction Photodetector Responsivity Thin film Nanostructure Etching (microfabrication) Fabrication Current (fluid)

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