MoS₂‑on-AlN Enables High-Performance\nMoS₂ Field-Effect Transistors through Strain Engineering

Abstract

Molybdenum\ndisulfide (MoS₂) has substantial application\nprospects in the field of electronic devices. The fabrication of devices\nof excellent quality based on MoS₂ films is an important\nresearch direction. In this study, based on the atomic layer deposition\ntechnique, large-area MoS₂ films were grown, and top-gate\nMoS₂-based field-effect transistor arrays were fabricated\non four substrates (AlN, GaN, sapphire, and SiO₂). It was\nfound that the interface defects that were introduced by lattice mismatch\nand roughness of the growth substrate could cause an exponential (10²) drop in mobility. Because of the small lattice mismatch\nand excellent surface quality, transistors on the AlN substrate have\nshown an enhanced mobility (10.45 cm² V^–1 s^–1) compared to transistors on the other substrates.\nThis study proves that the AlN substrate is a superior substrate for\nlarge-area and high-performance MoS₂ film synthesis. This\nresult can also be applied in higher-level microelectronic systems,\nsuch as in digital logic circuit design.