Mixed-Dimensional InSe–Si Heterojunction Nanostructures\nfor Self-Powered Broadband Photodetectors

Abstract

High-performance\nself-powered broadband photodetectors composed\nof mixed-dimensional (2D–3D) InSe–Si van der Waals heterojunctions\n(vdWHs) are demonstrated for the first time. Because of the suitable\nband structures, high electron mobility, and good light absorption\nof the individual 2D InSe and 3D Si, the 2D–3D vdWHs exhibit\nan excellent rectifying effect, a broad photoresponse region, high\nresponsivity, good stability, and good optical imaging capability.\nThe electrical and photoresponse performance is superior to that of\nmost other 2D InSe-based vdWHs. The good electrical and photoresponse\nperformance of 2D–3D InSe–Si vdWHs demonstrates their\nbroad applicability in high-performance optoelectronic devices.