Charge Injection in High-κ Gate Dielectrics of Single-Walled Carbon Nanotube Thin-Film Transistors

Abstract

We investigate charge injection into the gate dielectric of single-walled carbon nanotube thin-film transistors (SWCNT-TFTs) having Al₂O₃ and HfO₂ gate dielectrics. We demonstrate the use of electric field gradient microscopy (EFM) to identify the sign and approximate the magnitude of the injected charge carriers. Charge injection rates and saturation levels are found to differ between electrons and holes and also vary according to gate dielectric material. Electrically, Al₂O₃ gated devices demonstrate smaller average hysteresis and notably higher average on-state current and p-type mobility than those gated by HfO₂. These differences in transfer characteristics are attributed to the charge injection, observed <i>via</i> EFM, and correlate well with differences in tunneling barrier height for electrons and holes formed in the conduction and valence at the SWCNT/dielectric interface, respectively. This work emphasizes the need to understand the SWCNT/dielectric interface to overcome charge injection that occurs in the focused field region adjacent to SWCNTs and indicates that large barrier heights are key to minimizing the effect.