JOURNAL ARTICLE

Thermally\nStable Silver Nanowires-Embedding Metal\nOxide for Schottky Junction Solar Cells

Abstract

Thermally\nstable silver nanowires (AgNWs)-embedding metal oxide\nwas applied for Schottky junction solar cells without an intentional\ndoping process in Si. A large scale (100 mm<sup>2</sup>) Schottky\nsolar cell showed a power conversion efficiency of 6.1% under standard\nillumination, and 8.3% under diffused illumination conditions which\nis the highest efficiency for AgNWs-involved Schottky junction Si\nsolar cells. Indium–tin–oxide (ITO)-capped AgNWs showed\nexcellent thermal stability with no deformation at 500 °C. The\ntop ITO layer grew in a cylindrical shape along the AgNWs, forming\na teardrop shape. The design of ITO/AgNWs/ITO layers is optically\nbeneficial because the AgNWs generate plasmonic photons, due to the\nAgNWs. Electrical investigations were performed by Mott–Schottky\nand impedance spectroscopy to reveal the formation of a single space\ncharge region at the interface between Si and AgNWs-embedding ITO\nlayer. We propose a route to design the thermally stable AgNWs for\nphotoelectric device applications with investigation of the optical\nand electrical aspects.

Keywords:
Schottky barrier Schottky diode Energy conversion efficiency Layer (electronics) Solar cell Thermal Dielectric spectroscopy

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