A CMOS Image Sensor with Draining Only Modulation Pixels for Sub-Nanosecond Time-Resolved Imaging
Abstract
This paper presents a time-resolved image sensor with sub-nanosecond resolution using draining only charge modulation pixels. The new sensor structure offers advantages for time-resolved imaging applications by controlling the direction of carrier flow without transfer gates but with draining gate only. It is tested in applications such as fluorescence lifetime imaging microscopy (FLIM) and time-of-flight (TOF) range imaging, showing the potential for precise and effective imaging in short time frames.
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