BinodK. Rai (1619545)Iain W. H. Oswald (1590526)Jiakui K. Wang (1619542)Gregory T. McCandless (1406494)Julia Y. Chan (1406500)E. Morosan (1619539)
Single crystals of Lu<sub>3</sub><i>T</i><sub>4</sub>Ge<sub>13–<i>x</i></sub> (<i>T</i> = Co,\nRh, Os) and Y<sub>3</sub><i>T</i><sub>4</sub>Ge<sub>13–<i>x</i></sub> (<i>T</i> = Ir, Rh, Os) have been grown\nusing the self-flux method and found to adopt the Yb<sub>3</sub>Rh<sub>4</sub>Sn<sub>13–<i>x</i></sub> structure type.\nMagnetization and specific heat measurements confirm that all compounds\nare bulk superconductors, some with reduced superconducting gaps determined\nfrom specific heat suggesting multiband superconductivity. However,\nan unusual increase of the electrical resistivity and a decrease of\nthe charge carrier density on cooling in the normal state are observed\nfor all six compounds even though density functional periodic calculations\nreveal a metallic ground state. We empirically show that large atomic\ndisplacement parameter ratios in the <i>R</i><sub>3</sub><i>T</i><sub>4</sub>Ge<sub>13–<i>x</i></sub> compounds are correlated with the semiconductor-like behavior,\nwhich resolves the contradiction between the experiment and the calculations.
Wenzhen Lv (1765876)Jinliang Xu (8443134)Chao Gao (154531)
Pilar Maldonado-Manso (2954907)Enrique R. Losilla (1682857)María Martínez-Lara (2450383)Miguel A. G. Aranda (1669075)Sebastián Bruque (2444932)Fatima E. Mouahid (2954910)Mohammed Zahir (2954904)
Sheng Liu SunZhang LiWen HuangZhen‐Yu ChenHao WangChun Qian Zhang
A. V FedorovaН. В. ЧежинаE. A. PonomarevaYu. D. Chuvilo