Meng-Lin Tsai (1423354)Sheng-Han Su (1759930)Jan-Kai Chang (1551628)Dung-Sheng Tsai (1759927)Chang-Hsiao Chen (1344657)Chih-I Wu (1551610)Lain-Jong Li (1344654)Lih-Juann Chen (1423780)Jr-Hau He (1423351)
We realized photovoltaic operation in large-scale MoS<sub>2</sub> monolayers by the formation of a type-II heterojunction with p-Si. The MoS<sub>2</sub> monolayer introduces a built-in electric field near the interface between MoS<sub>2</sub> and p-Si to help photogenerated carrier separation. Such a heterojunction photovoltaic device achieves a power conversion efficiency of 5.23%, which is the highest efficiency among all monolayer transition-metal dichalcogenide-based solar cells. The demonstrated results of monolayer MoS<sub>2</sub>/Si-based solar cells hold the promise for integration of 2D materials with commercially available Si-based electronics in highly efficient devices.
Mingze Li (4020185)Xingce Fan (4488418)Yimeng Gao (6919166)Teng Qiu (1859140)
Seiko NetsuToru KanazawaTeerayut UwannoTomohiro AmemiyaKosuke NagashioYasuyuki Miyamoto
Ziqian Wang (2245957)Ruichun Luo (4640146)Isaac Johnson (8135247)Hamzeh Kashani (5753276)Mingwei Chen (1668166)
FedericoM. Pesci (1303605)Maria S. Sokolikova (4220587)Chiara Grotta (4220590)Peter C. Sherrell (4220581)Francesco Reale (4220584)Kanudha Sharda (4220593)Na Ni (500184)Pawel Palczynski (4220596)Cecilia Mattevi (1284351)
Li Wang (15202)Muhammad Tahir (741682)Hua Chen (43790)Justin B. Sambur (2038117)