Single-Layer MoS<sub>2</sub> Phototransistors
Zongyou Yin (1395061)Hai Li (254910)Hong Li (20183)Lin Jiang (217766)Yumeng Shi (1351218)Yinghui Sun (1542688)Gang Lu (19958)Qing Zhang (1802)Xiaodong Chen (410427)Hua Zhang (12549)
Abstract
A new phototransistor based on the mechanically exfoliated single-layer MoS<sub>2</sub> nanosheet is fabricated, and its light-induced electric properties are investigated in detail. Photocurrent generated from the phototransistor is solely determined by the illuminated optical power at a constant drain or gate voltage. The switching behavior of photocurrent generation and annihilation can be completely finished within <i>ca</i>. 50 ms, and it shows good stability. Especially, the single-layer MoS<sub>2</sub> phototransistor exhibits a better photoresponsivity as compared with the graphene-based device. The unique characteristics of incident-light control, prompt photoswitching, and good photoresponsivity from the MoS<sub>2</sub> phototransistor pave an avenue to develop the single-layer semiconducting materials for multifunctional optoelectronic device applications in the future.
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