Room-Temperature Near-Infrared Photodetectors Based\non Single Heterojunction Nanowires

Abstract

Nanoscale\nnear-infrared photodetectors are attractive for their\npotential applications in integrated optoelectronic devices. Here\nwe report the synthesis of GaSb/GaInSb p–n heterojunction semiconductor\nnanowires for the first time through a controllable chemical vapor\ndeposition (CVD) route. Based on these nanowires, room-temperature,\nhigh-performance, near-infrared photodetectors were constructed. The\nfabricated devices show excellent light response in the infrared optical\ncommunication region (1.55 μm), with an external quantum efficiency\nof 10⁴, a responsivity of 10³ A/W, and a short\nresponse time of 2 ms, which shows promising potential applications\nin integrated photonics and optoelectronics devices or systems.