JOURNAL ARTICLE

PbS-Decorated WS<sub>2</sub> Phototransistors with\nFast Response

Abstract

Tungsten disulfide (WS<sub>2</sub>), as a typical metal dichalcogenides\n(TMDs), has aroused keen research interests in photodetection. Here,\nfield effect phototransistors (FE<sub>p</sub>Ts) based on heterojunction\nbetween monolayer WS<sub>2</sub> and PbS colloidal quantum dots are\ndemonstrated to show high photoresponsivity (up to ∼14 A/W),\nwide electric bandwidth (∼396 Hz), and excellent stability.\nMeanwhile, the devices exhibit fast photoresponse times of ∼153\nμs (rise time) and ∼226 μs (fall time) due to the\nassistance of heterojunction on the transfer of photoexcitons. Therefore,\nexcellent device performances strongly underscore monolayer WS<sub>2</sub>–PbS quantum dot as a promising material for future\nphotoelectronic applications.

Keywords:
Nucleofection Gestational period TSG101 Fusible alloy Liquation Diafiltration Dysgeusia Hyporeflexia Proteogenomics

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