Scalable and Controllable Deposition of Few-Layer MoS ₂ Using Atomic Layer Deposition

Abstract

Computational energy consumption has been increasing exponentially, making energy-efficient microelectronics and computing an urgent need. Three-dimensional integrated circuits (3D ICs) and neuromorphic computing promise to revolutionize information technology by drastically reducing the energy consumption of computers, and two-dimensional (2D) semiconductors like molybdenum disulfide (MoS 2 ) can enable such technologies. However, scalable and controllable manufacturing processes are still needed to realize the technology’s full potential. Here, we demonstrate the uniform and controlled deposition of few-layered MoS 2 using atomic layer deposition (ALD) for the purposes of memtransistor fabrication. By leveraging the equilibrium shift from material deposition to material etching, a self-limiting deposition of MoS 2 is achieved where material growth is stopped after the initial few layers. The resulting few-layer MoS 2 was characterized using Raman spectroscopy and X-ray photoelectron spectroscopy and was used to fabricate and test memtransistors. This deposition strategy is straightforward, robust and more scalable compared to other methods such as powder CVD and exfoliation.