Advances in gallium nitride/two‐dimensional‐material heterojunction‐based photodetectors

Abstract

Abstract Recent advancements in integrating gallium nitride (GaN) with two‐dimensional (2D) materials have unlocked new frontiers in photodetector research. Combining wide‐bandgap GaN with optoelectronically tunable, van der Waals‐compatible 2D materials enables control of interfacial phenomena and novel photodetection functionalities. This review presents a comprehensive overview of the recent progress in GaN/2D material‐based photodetectors, with a focus on device mechanisms and performance enhancements. We explore both transfer and in situ growth techniques, evaluating their impacts on the interface quality and material compatibility. Moreover, we highlight how band alignment and interlayer coupling influence the optoelectronic behavior of various device architectures. Representative heterostructure combinations exemplify the functional diversity enabled by tailored interface design. Additionally, we present their potential for diverse practical applications and suitability for integration with existing devices. Finally, we identify current challenges in interface engineering, carrier dynamics, and scalable integration and propose future directions toward high‐performance intelligent optoelectronic systems based on GaN/2D heterostructures.