A ferroelectrics/oxide heterojunction based memristor for artificial synapse and neuromorphic computing

Wenlong Liu; Chi Zhang; Di Li; Qibin Yuan; Guoqiang Tan; Ao Xia; Bai Sun; Haibo Yang; Dinghan Liu

doi:10.1016/j.jcis.2025.138911

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A ferroelectrics/oxide heterojunction based memristor for artificial synapse and neuromorphic computing

Wenlong Liu Chi Zhang Di Li Qibin Yuan Guoqiang Tan Ao Xia Bai Sun Haibo Yang Dinghan Liu

Year: 2025 Journal: Journal of Colloid and Interface Science Vol: 702 (Pt 1)Pages: 138911-138911 Publisher: Elsevier BV

DOI: 10.1016/j.jcis.2025.138911

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Keywords:

Neuromorphic engineering Memristor Heterojunction Materials science Oxide Nanotechnology Synapse Artificial neural network Computer architecture Computer science Optoelectronics Artificial intelligence Engineering Electronic engineering Neuroscience Psychology

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Advanced Memory and Neural Computing

Physical Sciences → Engineering → Electrical and Electronic Engineering

Transition Metal Oxide Nanomaterials

Physical Sciences → Materials Science → Polymers and Plastics

Neuroscience and Neural Engineering

Life Sciences → Neuroscience → Cellular and Molecular Neuroscience

A ferroelectrics/oxide heterojunction based memristor for artificial synapse and neuromorphic computing

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