Interface-Engineered HfO2/Al2O3 Nanolaminate Gate Insulators for InGaZnO Thin-Film Transistors and 2T0C DRAM Applications

Sang Han Ko; Sung‐Min Yoon

doi:10.1021/acsaelm.5c01042

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Interface-Engineered HfO₂/Al₂O₃ Nanolaminate Gate Insulators for InGaZnO Thin-Film Transistors and 2T0C DRAM Applications

Sang Han Ko Sung‐Min Yoon

Year: 2025 Journal: ACS Applied Electronic Materials Vol: 7 (17)Pages: 8100-8107 Publisher: American Chemical Society

DOI: 10.1021/acsaelm.5c01042

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Keywords:

Dram Materials science Optoelectronics Thin-film transistor Interface (matter) Transistor Electrical engineering Nanotechnology Layer (electronics) Engineering Composite material Voltage

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Interface-Engineered HfO₂/Al₂O₃ Nanolaminate Gate Insulators for InGaZnO Thin-Film Transistors and 2T0C DRAM Applications

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