Current-Voltage Modeling of Transistors Based on Two-Dimensional Molybdenum Disulfide

Abstract

This paper presents a compact model for the current-voltage (I–V) characteristics of field-effect transistors (FETs) based on two-dimensional molybdenum disulfide (MoS2) channels. The proposed model is fully analytical, explicit, and physics-based, ensuring compatibility with circuit simulators while providing a comprehensive description of the device behavior. A key starting point is the derivation of a closed-form expression for the electrostatic potential, achieved through a novel solution of the Poisson equation, by means of a Taylor series expansion method using a sliding expansion point. Our modelling approach avoids iterative procedures and special functions commonly used in the literature and allows a more detailed and physically grounded analysis of device operation into a unified analytical framework, including effects often overlooked or fragmented in previous works, as the model incorporates critical non-idealities, such as short-channel effects, interface traps, carrier mobility degradation, and velocity saturation. The results are validated against experimental and simulation data from the literature, demonstrating excellent agreement. This work offers a robust and accessible modeling approach for 2D-FETs, enabling the design of high-performance integrated circuits and favoring the practical implementation of two-dimensional materials in nanoelectronics.