JOURNAL ARTICLE

Luminescent AlN Semiconductor Nanocrystals

Abstract

Aluminum nitride III‐V semiconductor nanoparticles are prepared in the liquid phase via a two‐step synthesis. In a first step, a mixed amide‐imide intermediate is prepared in liquid ammonia. In a second step, the ammonolysis is completed by microwave heating at 300 °C in [BMIm][NTf 2 ] as an ionic liquid to obtain crystalline β‐AlN, which is usually known as a high‐pressure phase. The nanoparticles have a size of 3.7 ± 0.7 nm. Particle size and chemical composition are examined by transmission electron microscopy, energy‐dispersive X‐ray spectroscopy, infrared spectroscopy, and X‐ray powder diffraction. According to UV–vis spectroscopy and a Tauc plot, a bandgap of 5.2 eV is determined. The AlN nanoparticles show photoluminescence with bluish white emission and a quantum yield of 15%, which is a typical value for core‐type semiconductor nanoparticles without a protecting shell. A liquid‐phase synthesis of crystalline AlN nanoparticles (<10 nm) showing visible emission at room temperature is reported for the first time.

Keywords:
Nanocrystal Materials science Semiconductor Luminescence Nanotechnology Optoelectronics Engineering physics Physics

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Citation History

Topics

GaN-based semiconductor devices and materials
Physical Sciences →  Physics and Astronomy →  Condensed Matter Physics
Acoustic Wave Resonator Technologies
Physical Sciences →  Engineering →  Biomedical Engineering
Gas Sensing Nanomaterials and Sensors
Physical Sciences →  Engineering →  Electrical and Electronic Engineering

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