Band Gap Engineering of Cu2ZnGeS4xSe4(1–x) Solid Solutions

В. В. Хорошко; Н. Г. Пугач; А. В. Станчик; Tatiana N. Osmolovskaia

doi:10.1021/acs.jpclett.5c01457

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Band Gap Engineering of Cu₂ZnGeS_4xSe_4(1–x) Solid Solutions

В. В. Хорошко Н. Г. Пугач А. В. Станчик Tatiana N. Osmolovskaia

Year: 2025 Journal: The Journal of Physical Chemistry Letters Vol: 16 (28)Pages: 7212-7216 Publisher: American Chemical Society

DOI: 10.1021/acs.jpclett.5c01457

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Abstract

Cu₂ZnGeS_4xSe_4(1-x) (CZGSSe) single crystals were grown by chemical vapor transport (CVT) from synthesized polycrystals using iodine as a transport agent. The elemental analysis showed good agreement with stoichiometry. The values of the band gap of solid solutions are determined from the transmission spectra in the region of the absorption edge, and its concentration dependence, which has a nonlinear quadratic dependence on the composition, is established. These findings highlight the potential of CZGSSe single crystals for optoelectronic applications, emphasizing the tunability of their band gap through composition variation.

Keywords:

Band gap Stoichiometry Solid solution Materials science Quadratic equation Absorption edge Absorption (acoustics) Spectral line Chemical composition Enhanced Data Rates for GSM Evolution Analytical Chemistry (journal) Absorption spectroscopy Physical chemistry Chemistry Optics Optoelectronics Physics Thermodynamics Mathematics

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Chalcogenide Semiconductor Thin Films

Physical Sciences → Engineering → Electrical and Electronic Engineering

Quantum Dots Synthesis And Properties

Physical Sciences → Materials Science → Materials Chemistry

Crystal Structures and Properties

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Band Gap Engineering of Cu₂ZnGeS_4xSe_4(1–x) Solid Solutions

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