Perovskite Quantum Dot‐Enhanced Silicon Photodetectors for High‐Performance Infrared Sensing

Abstract

Infrared photodetectors are crucial for autonomous driving, providing reliable object detection under challenging lighting conditions. However, conventional silicon‐based devices are limited in their responsivity beyond 1100 nm. Here, a scallop‐structured silicon photodetector integrated with tin‐substituted perovskite quantum dots (PQDs) that effectively extends infrared detection is demonstrated. The scallop nanowire design creates resonant light trapping, while the PQD layer enhances charge generation and transfer, especially at wavelengths above 1000 nm. Notably, the tin‐substituted PQDs improve photodetection at 1100 nm and achieve a faster response time (≈6 ms) compared with bare silicon devices. This work establishes a viable route toward high‐performance infrared sensing using perovskite‐functionalized silicon architectures, offering promising applications in autonomous vision, biomedical imaging, and industrial diagnostics.