High-Performance Ultraviolet Photodetectors Based on Ga<sub>2</sub>O<sub>3</sub>/GaN Gradient Heterojunction

Yuan Li; Kai Xiao; Zefan Lin; Kai Chen; Jiahao Zou; Shaohao Ye; Huili Liang; Zengxia Mei

doi:10.1109/ted.2025.3582232

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High-Performance Ultraviolet Photodetectors Based on Ga₂O₃/GaN Gradient Heterojunction

Yuan Li Kai Xiao Zefan Lin Kai Chen Jiahao Zou Shaohao Ye Huili Liang Zengxia Mei

Year: 2025 Journal: IEEE Transactions on Electron Devices Vol: 72 (8)Pages: 4226-4231 Publisher: Institute of Electrical and Electronics Engineers

DOI: 10.1109/ted.2025.3582232

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Keywords:

Photodetector Heterojunction Ultraviolet Optoelectronics Materials science Wide-bandgap semiconductor Gallium nitride Nanotechnology

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Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Advanced Photocatalysis Techniques

Physical Sciences → Energy → Renewable Energy, Sustainability and the Environment

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

High-Performance Ultraviolet Photodetectors Based on Ga₂O₃/GaN Gradient Heterojunction

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