Trap States in HfO2/Ga2O3 and Al2O3/Ga2O3 Metal Insulator Semiconductor Structures

A. Y. Polyakov; Andrey Miakonkikh; V. T. Volkov; E. B. Yakimov; I. Shchemerov; A.A. Vasil'ev; A.A. Romanov; L. A. Alexanyan; А. В. Черных; С. В. Черных; S. J. Pearton

doi:10.1021/acsaelm.5c00932

JOURNAL ARTICLE

Trap States in HfO₂/Ga₂O₃ and Al₂O₃/Ga₂O₃ Metal Insulator Semiconductor Structures

A. Y. Polyakov Andrey Miakonkikh V. T. Volkov E. B. Yakimov I. Shchemerov A.A. Vasil'ev A.A. Romanov L. A. Alexanyan А. В. Черных С. В. Черных S. J. Pearton

Year: 2025 Journal: ACS Applied Electronic Materials Publisher: American Chemical Society

DOI: 10.1021/acsaelm.5c00932

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Materials science Physics

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Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

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Trap States in HfO2/Ga2O3 and Al2O3/Ga2O3 Metal Insulator Semiconductor Structures

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