Indium-doped α-Ga<sub>2</sub>O<sub>3</sub> nanorod arrays for ultrasensitive solar-blind UV photodetector application

Jiayun Wei; Yongchang Xu; Yang Shen; Liangping Shen; Hao Wu; Zheng Gao; Hai Zhou; Yunrui Jiang; Longhui Zeng; Houzhao Wan; Wei Han; Hao Wang

doi:10.1039/d5tc01300c

JOURNAL ARTICLE

Indium-doped α-Ga₂O₃ nanorod arrays for ultrasensitive solar-blind UV photodetector application

Jiayun Wei Yongchang Xu Yang Shen Liangping Shen Hao Wu Zheng Gao Hai Zhou Yunrui Jiang Longhui Zeng Houzhao Wan Wei Han Hao Wang

Year: 2025 Journal: Journal of Materials Chemistry C Vol: 13 (24)Pages: 12254-12262 Publisher: Royal Society of Chemistry

DOI: 10.1039/d5tc01300c

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Abstract

We designed a solar-blind UV photodetector based on In-doped Ga 2 O 3 arrays that demonstrates competitive performances with excellent photoelectric response times of 24.8 ms (rise) and 27.6 ms (decay), and high detectivity (1.55 × 10 14 Jones).

Keywords:

Materials science Photodetector Nanorod Doping Optoelectronics Indium Nanotechnology

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Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Advanced Photocatalysis Techniques

Physical Sciences → Energy → Renewable Energy, Sustainability and the Environment

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Indium-doped α-Ga₂O₃ nanorod arrays for ultrasensitive solar-blind UV photodetector application

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Indium-doped α-Ga2O3 nanorod arrays for ultrasensitive solar-blind UV photodetector application

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