Atomic Layer Etching of SiO<sub>2</sub> Utilizing Ultra-Low Electron Temperature Plasma

Junyoung Park; Nayeon Kim; Jung‐Eun Choi; Y. K. Yeo; Min-Seok Kim; Chang-Min Lim; Beom‐Jun Seo; Chin‐Wook Chung

doi:10.1021/acsaelm.5c00362

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Atomic Layer Etching of SiO₂ Utilizing Ultra-Low Electron Temperature Plasma

Junyoung Park Nayeon Kim Jung‐Eun Choi Y. K. Yeo Min-Seok Kim Chang-Min Lim Beom‐Jun Seo Chin‐Wook Chung

Year: 2025 Journal: ACS Applied Electronic Materials Vol: 7 (10)Pages: 4520-4528 Publisher: American Chemical Society

DOI: 10.1021/acsaelm.5c00362

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Keywords:

Etching (microfabrication) Plasma Materials science Layer (electronics) Plasma etching Electron Electron temperature Atomic physics Nanotechnology Physics

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Metal and Thin Film Mechanics

Physical Sciences → Engineering → Mechanics of Materials

Plasma Diagnostics and Applications

Physical Sciences → Engineering → Electrical and Electronic Engineering

Atomic Layer Etching of SiO₂ Utilizing Ultra-Low Electron Temperature Plasma

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Atomic Layer Etching of SiO2 Utilizing Ultra-Low Electron Temperature Plasma

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Atomic Layer Etching of SiO₂ Utilizing Ultra-Low Electron Temperature Plasma

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Highly Selective SiO₂ Etching in Low-Electron-Temperature Inductively Coupled Plasma

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Surface Phenomena During Plasma-Assisted Atomic Layer Etching of SiO₂

Nanoporous SiO₂made by atomic layer deposition and atomic layer etching