Reconfigurable Ge₂Sb₂Te₅/MoS₂ Heterojunction Photodetector with High‐Contrast Responsivity for Retinomorphic Vision Sensing

Abstract

Abstract Reconfigurable photodetectors are crucial for applications such as adaptive sensing and dynamic imaging. However, conventional devices based on materials such as silicon typically require external electric fields and additional memory units, resulting in increased system complexity and energy consumption. Here, a self‐driven, reconfigurable, and controllable photoresponse with a large responsivity contrast of up to 100 is achieved using a Ge 2 Sb 2 Te 5 (GST)/MoS 2 heterojunction, leveraging the integration of the reversible phase‐transition capability of phase‐change materials (PCMs) with the nonvolatile reconfigurable optoelectronic merits of two‐dimensional (2D) materials. The reconfigurable GST/MoS 2 heterojunction photodetector also demonstrates fast response times, excellent cycling stability, and a linear photocurrent–power relationship, supporting its use in real‐time imaging systems. Furthermore, a 3 × 3 reconfigurable photodetector array is implemented as an optical convolution kernel for in‐sensor image processing, achieving high‐quality image recognition, contrast enhancement, and edge detection. This work positions phase‐change‐2D heterojunctions as a promising platform for next‐generation reconfigurable photodetection and intelligent sensing technologies.