Bi₂O₂Se/Ta₂NiSe₅ Tunneling Heterojunction for High‐Performance, Polarization‐Sensitive, and Broadband Infrared Photodetector

Abstract

Abstract New technologies such as autonomous driving, and machine vision keep pushing the photodetectors to acquire a comprehensive high performance including high responsivity, fast response, low detection limit, polarization sensitivity, and broadband photoresponse. 2D van der Waals (vdW) heterostructures have emerged as promising candidates for next‐generation photodetectors due to their tailored band alignments and unique physical properties. In this work, a high‐performance photodetector based on the Bi 2 O 2 Se/Ta 2 NiSe 5 heterojunction, which simultaneously achieves high responsivity (>10 3 A W −1 ) and fast response time (≈5 µs) through the tunneling effect is proposed. The heterojunction device exhibits impressive sensitivity with a low detection limit, achieving ≈2 pW at 633 nm and ≈4 nW at 1550 nm. The specific detectivity can reach 3.75 × 10 13 Jones at 633 nm and 1.8 × 10 10 Jones at 1550 nm. Furthermore, high‐resolution broadband and polarized light imaging are successfully demonstrated. These findings provide more opportunities for developing next‐generation photodetectors with comprehensive high performance.