Inverse-Designed 90-Degree Silicon Nitride Bends for the C Band

Julián L. Pita; Narges Dalvand; Michaël Ménard

doi:10.1109/jlt.2025.3554096

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JOURNAL ARTICLE

Inverse-Designed 90-Degree Silicon Nitride Bends for the C Band

Julián L. Pita Narges Dalvand Michaël Ménard

Year: 2025 Journal: Journal of Lightwave Technology Vol: 43 (12)Pages: 5804-5810 Publisher: Institute of Electrical and Electronics Engineers

DOI: 10.1109/jlt.2025.3554096

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Keywords:

Degree (music) Silicon nitride Inverse Silicon Materials science Inverse problem Optoelectronics Optics Electronic engineering Engineering Mathematics Physics Acoustics Mathematical analysis Geometry

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Topics

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Advanced MEMS and NEMS Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Acoustic Wave Resonator Technologies

Physical Sciences → Engineering → Biomedical Engineering

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