High voltage monolithic pixel sensor in 55 nm technology

H. Zhang; T. Hirono; Yu-Chen Su; R. Dong; I‎. ‎Perić

doi:10.1088/1748-0221/20/03/c03023

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JOURNAL ARTICLE

High voltage monolithic pixel sensor in 55 nm technology

H. Zhang T. Hirono Yu-Chen Su R. Dong I‎. ‎Perić

Year: 2025 Journal: Journal of Instrumentation Vol: 20 (03)Pages: C03023-C03023 Publisher: Institute of Physics

DOI: 10.1088/1748-0221/20/03/c03023

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Abstract

Abstract The Monolithic Active Pixel Sensors (MAPS) implemented in high-voltage CMOS (HVCMOS) technology are suitable for tracking of high-energy particles in particle physics experiments. To explore performance improvements in smaller technology nodes, a prototype of the next-generation HVCMOS sensor has been done using 55 nm high-voltage technology. This technology offers the benefits of smaller feature size and reduced power consumption.

Keywords:

Materials science Optoelectronics Pixel Electrical engineering Optics Physics Engineering

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Particle Detector Development and Performance

Physical Sciences → Physics and Astronomy → Nuclear and High Energy Physics

CCD and CMOS Imaging Sensors

Physical Sciences → Engineering → Electrical and Electronic Engineering

Radiation Detection and Scintillator Technologies

Physical Sciences → Physics and Astronomy → Radiation

High voltage monolithic pixel sensor in 55 nm technology

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