Xiaofei MaZeping WangQinggang QinJiawang ChenXue LiuFengxia ZouZhengyu XuWei ChenGuanghai LiYuan LiTianyou ZhaiLiang Li
Abstract On‐chip polarized photodetectors play a crucial role in advancing ultra‐compact optoelectronic devices for next‐generation technologies. However, simultaneously detecting the angle of linear polarization (AoLP) and the degree of linear polarization (DoLP) within a single device remains a challenging task, particularly due to the inherently weak polarization states found in naturally anisotropic materials. In this paper, it is reported on the development of a twisted monopole barrier photodetector based on a PdSe 2 /MoS 2 /PdSe 2 configuration. This photodetector features a rapid response time of 7–12 µs. In an imaging demonstration, it operates as a single‐polarization photodetector, reconstructing AoLP and DoLP distributions of target objects through bias‐switchable polarization detection across a wide spectral range, all without the plasmonic/metasurface nanostructures or polarization filters. Additionally, it demonstrates bipolar characteristics under zero‐bias conditions at room temperature, enabling dual‐binary coding for polarimetric‐encoded communication. These combination of features positions the photodetector as a highly promising candidate for on‐chip applications.
Can Su (3901459)Mengyang Li (5348192)Hui Yan (117134)Yu Zhang (12946)Heng Li (6476)Wenhao Fan (7022210)Weijie Bai (20529734)Xinjian Liu (351972)Qingguo Wang (415322)Shougen Yin (2455660)
Hongxiang ShiHoujie ChenZhenhua WeiWei LuoFangping Ouyang
Can SuMengyang LiHui YanYù ZhangHeng LiWenhao FanWeijie BaiXinjian LiuQingguo WangShougen Yin
Weijing Liu (2607778)Xiaozhendong Bao (21403530)Yifan Zhou (1973332)Junyun Meng (21403533)Siyuan Qi (7123919)Yuee Xie (3901618)Yuanping Chen (3901612)
W. LiuXinhe BaoYifan ZhouJunhua MengSiyuan QiYuee XieYuanping Chen