High-quality single-crystalline BiSe topological insulator nanowires and nanobelts grown <i>via</i> chemical vapor deposition

Zihao Xuan; Yongzhao Feng; Boqin Song; Tianping Ying; Xiaofang Lai; Jikang Jian

doi:10.1039/d5ce00089k

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High-quality single-crystalline BiSe topological insulator nanowires and nanobelts grown via chemical vapor deposition

Zihao Xuan Yongzhao Feng Boqin Song Tianping Ying Xiaofang Lai Jikang Jian

Year: 2025 Journal: CrystEngComm Vol: 27 (15)Pages: 2401-2406 Publisher: Royal Society of Chemistry

DOI: 10.1039/d5ce00089k

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Abstract

High-quality single-crystalline BiSe nanowires and nanobelts with high aspect ratios and typical electrical transport of topological insulators were successfully synthesized.

Keywords:

Chemical vapor deposition Nanowire Materials science Insulator (electricity) Topological insulator Deposition (geology) Nanotechnology Chemical engineering Optoelectronics Physics Condensed matter physics Engineering

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2D Materials and Applications

Physical Sciences → Materials Science → Materials Chemistry

Topological Materials and Phenomena

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Phase-change materials and chalcogenides

Physical Sciences → Materials Science → Materials Chemistry

High-quality single-crystalline BiSe topological insulator nanowires and nanobelts grown via chemical vapor deposition

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